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| Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. January 1998 Features * 1A, 120V and 150V * rDS(ON) = 1.9 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFL1N12 RFL1N15 PACKAGE TO-205AF TO-205AF BRAND G S RFL1N12 RFL1N15 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 1444.2 5-1 RFL1N12, RFL1N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N12 120 120 1 5 20 8.33 0.0667 -55 to 150 300 260 RFL1N15 150 150 1 5 20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 120 150 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = 0.8 x Rated BVDSS , TC = 25oC TC = 125oC VGS = 20V, VDS = 0V ID =1A, VGS =10V ID = 2A, VGS = 10V 2 400 VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) 17 30 30 30 4 1 25 100 1.9 6.3 1.9 25 45 45 50 200 80 25 15 V V V A A nA V V S ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL1N12 RFL1N15 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) IGSS VDS(ON) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC ID = 1A, VGS = 10V, (Figures 6, 7) ID = 1A, VDS = 10V, (Figure 10) ID 1A, VDD = 75V, RGS = 50 VGS = 10V, (Figures 11, 12, 13) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s maximum, duty cycle 2%. SYMBOL VSD trr ISD = 1A ISD = 1A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 5-2 RFL1N12, RFL1N15 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) ID, DRAIN CURRENT (A) 1.0 Unless Otherwise Specified 1.5 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10.00 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 1.00 4.0 3.5 3.0 2.5 2.0 1.5 1 VGS = 5V RFL1N12 RFL1N15 1000 0.5 VGS = 4V 0 1 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 9 10 VGS = 20V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 250A PULSE TEST 0.10 0.01 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 3.0 2.5 ID , DRAIN CURRENT (A) TC = 25oC 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 VGS , GATE TO SOURCE VOLTAGE (V) 14 TC = -40oC TC = 125oC VDS = 12V 250A PULSE TEST DUTY CYCLE 2% 6 250A PULSE TEST DUTY CYCLE 2% rDS(ON) , DRAIN TO SOURCE ON RESISTANCE 5 TC = 125oC 4 3 TC = 25oC 2 TC = -40oC 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID , DRAIN CURRENT (A) TC = 125oC TC = -40oC FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFL1N12, RFL1N15 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V, ID = 1A NORMALIZED GATE THRESHOLD VOLTAGE (V) Unless Otherwise Specified (Continued) 1.4 VGS = VDS, ID = 250A 1.5 1.2 1.0 1.0 0.5 0.8 0 -50 0 50 100 150 200 0 -50 0 50 100 150 200 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION TEMPERATURE 240 f = 1MHz 200 C, CAPACITANCE (pF) 160 120 CISS 80 COSS 40 CRSS 0 0 10 20 30 40 50 60 70 VDS , DRAIN TO SOURCE VOLTAGE (V) gf , TRANSCONDUCTANCE (S) 1200 VDS = 10V 1000 80s PULSE TEST 800 TC = 25oC 600 TC = 125oC 400 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 ID , DRAIN CURRENT (A) TC = -40oC FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT 150 BVDSS VDD = VDSS 10 VDD = VDSS 8 VGS , VOLTS (V) GATE TO SOURCE VOLTAGE RL = 75 IG(REF) = 0.095mA VGS = 10V 0.75VDSS 0.50VDSS 0.25VDSS DRAIN TO SOURCE VOLTAGE 112.5 VDS, VOLTS (V) 6 75 4 37.5 2 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 RFL1N12, RFL1N15 Test Circuits and Waveforms VDD RL VDS VDS VGS 10% 10% 90% VGS 10% 50% PULSE WIDTH 50% tON tD(ON) tR 90% tOFF tD(OFF) tF 90% 0V RGS DUT FIGURE 12. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS 5-5 |
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